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PARTICULARITIES OF MANUFACTURING A STRUCTURE OF "ALUMINIUM NITRIDE
Gurin Sergey Aleksandrovich, Head of laboratory, Research Institute of Physical Measurements
Background. The application of silicon carbide and aluminum nitride wide-gap semiconductors is connected with the particularities of their physical and chemical properties as well as technological compatibility while manufacturing primary microsystems converters. Of particular interest is manufacturing of stable structures of "aluminum nitride on silicon carbide" and the possibility of their use in sensitive elements of functional electronics microsystems which have a piezoeffect in a film of aluminum nitride with high strength characteristics of silicon carbide in extreme conditions. The aim of this work is the hardware and resource optimization of proc-ess conditions of obtaining a heterogeneous structure SiC-AlN for primary microsystems converters and calculation of the influence of thermomechanical residual voltage at the boundary of thin film structure and the substrate.
thin film structure, technology of creating, residual internal thermo-mechanical voltage.
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