Article 5114

Title of the article

PARTICULARITIES OF MANUFACTURING A STRUCTURE OF "ALUMINIUM NITRIDE
ON SILICON CARBIDE" FOR A SENSING ELEMENT

Authors

Gurin Sergey Aleksandrovich, Head of laboratory, Research Institute of Physical Measurements
(10 Volodarskogo street, Penza, Russia), teslananoel@rambler.ru
Pecherskaya Rimma Mikhaylovna, Doctor of engineering sciences, professor, dean of the faculty of electrical power engineering, nanotechnology and radio electronics, Penza State University
(40 Krasnaya street, Penza, Russia), fenr@pnzgu.ru

Index UDK

621.38; 538.9

Abstract

Background. The application of silicon carbide and aluminum nitride wide-gap semiconductors is connected with the particularities of their physical and chemical properties as well as technological compatibility while manufacturing primary microsystems converters. Of particular interest is manufacturing of stable structures of "aluminum nitride on silicon carbide" and the possibility of their use in sensitive elements of functional electronics microsystems which have a piezoeffect in a film of aluminum nitride with high strength characteristics of silicon carbide in extreme conditions. The aim of this work is the hardware and resource optimization of proc-ess conditions of obtaining a heterogeneous structure SiC-AlN for primary microsystems converters and calculation of the influence of thermomechanical residual voltage at the boundary of thin film structure and the substrate.
Materials and methods. The authors carried out the comparative analysis of the obtained patterns properties by means of optical and scanning electron microscopy in order to determine the optimum technological conditions of obtaining SiC-AlN com-position and to evaluate factors of ion-plasma processes. The calculation of internal residual voltage was conducted taking into account the differences of temperature coefficients of linear expansion of materials (thermal component) and elastic moduli (mechanical component). This makes it possible to forecast structural characteristics while minimizing the time of field experiments.
Results. The modes of obtaining a heterogeneous SiC-AlN structure on the silicon substrate of (100) orientation were studied. The authors determined the conditions of the AlN piezoelectric properties in films and the strength characteristics of the SiC dielectric layer in terms of application of extreme electronics microsystems in SE. The researchers carried out calculation of the effect of thermomechanical internal residual voltage on the properties of the obtained heterostructures.
Conclusions. Technological regimes of obtaining heterogeneous structures based on SiC-AlN composition with desired properties were experimentally tested. This structure can be used in SE sensors operating in harsh environments. The offered calculation of internal residual voltages at the interface between the substrate and the thin film structure allows to predict the conditions for obtaining heterostructures and evaluate the morphology of the films

Key words

thin film structure, technology of creating, residual internal thermo-mechanical voltage.

Download PDF
References

1. Luchinin V. V., Tairov Yu. M. Pis'ma v Zhurnal teoreticheskoy fiziki [Letters to the journal of theoretical physics]. 1984, vol. 10, no. 14, pp. 873–874.
2. Korlyakov A. V., Luchinin V. V., Mal'tsev P. P. Mikroelektronika [Microelectronics]. 1999, vol. 28, no. 3, pp. 201–212.
3. Korlvakoi A. V., Luchinin V. V. Transaction of 4-th International Conference High Temperature Electronics Conference, Albuquerque. New Mexico, USA, 1998, vol. I, pp. 250–252.
4. Barinov I. N., Volkov V. S. Izvestiya vysshikh uchebnykh zavedeniy. Povolzhskiy region. Tekhnicheskie nauki [University proceedings. Volga region. Engineering sciences]. 2011, Spetsvypusk [Special issue] no. 3, pp. 85–95.
5. Korlyakov A. V. Rostovye fazovye politipnye prevrashcheniya pri epitaksii karbida kremniya i nitrida alyuminiya: dis. kand. fiz.-mat. nauk [Growing phase polytypic conversion in conditions of silicon carbide epitaxy and aluminum nitride: dissertation to ap-ply for the degree of the candidate of physical and mathematical sciences]. Leningrad, 1989.
6. Lely J. A. Ber. Deut. Keram. Ges. 1955, vol. 8, p. 229.
7. Raspylenie tverdykh tel ionnoy bombardirovkoy [Dispersion of solid bodies through ion bombardment]. Ed. R. Berish. Moscow: Mir, 1984, 336 p.
8. Kuznetsov A. N., Lebedev A. A., Rastegaeva M. G., Rogachev N. A., Terukov E. I., Shcheglov M. P. Fizika i tekhnika poluprovodnikov [Physics and technology of semi-conductors]. 1995, no. 8, pp. 141–147.
9. Kazak-Kazakevich A. Z., Korlyakov A. V., Kostromin S. V., Luchinin V. V. Abstract E-MRS 1996 Spring Meeting. Strasbourg, France, 1996, p. A–26.

 

Дата создания: 28.08.2014 09:41
Дата обновления: 28.08.2014 10:21